Datasheet Summary
Power MOSFET
30 V, 207 A, Single N- Channel, SO- 8 FL
Features
- Integrated Schottky Diode
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- These Devices are Pb- Free and are RoHS pliant
Applications
- Server, Net, POL
- Synchronous Rectification for DC- DC Converters
- Low Side Switching
- High Performance Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
36 A
TA = 85°C
Power Dissipation
RqJA (Note...