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NTMFS4982NF
Power MOSFET
30 V, 207 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant
Applications
• Server, Netcom, POL • Synchronous Rectification for DC−DC Converters • Low Side Switching • High Performance Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
36 A
TA = 85°C
26
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current 10 sec
RqJA
v
TA = 25°C
TA = 25°C TA = 85°C
PD ID
2.
NTMFS4982NF Datasheet
