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NTMFS4983NF
Power MOSFET
30 V, 106 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • Synchronous Rectification for DC−DC Converters • Low Side Switching • Telecom Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
30 A
TA = 85°C
22
Power Dissipation RqJA (Note 1)
Continuous Drain Current RqJA v 10 sec
TA = 25°C
TA = 25°C TA = 85°C
PD ID
NTMFS4983NF Datasheet
