Datasheet Summary
Power MOSFET
30 V, 0.9 mW, 303 A, Single N- Channel, SO- 8FL
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Notes 1, 3)
Steady State
TC = 25°C TC = 25°C
VDSS VGS ID
30 "20 303
134 W
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2, 3)
Steady State
TA = 25°C TA...