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NTMFS4C024N - N-Channel Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number NTMFS4C024N
Manufacturer onsemi
File Size 203.15 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NTMFS4C024N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET - Power, Single N-Channel, SO-8FL 30 V, 78 A NTMFS4C024N Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA ≤ 10 s (Note 2) TA = 25°C TA = 80°C TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA ≤ 10 s (Note 2) Continuous Drain Current RqJA (Note 3) Steady State TA = 25°C TA = 25°C TA = 80°C Power Dissipation RqJA (Note 3)