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NTMS4872N Power MOSFET
Features
30 V, 10.2 A, N−Channel, SO−8
• • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device
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V(BR)DSS 30 V RDS(ON) MAX 13.5 mW @ 10 V 16.5 mW @ 4.5 V N−Channel D Value 30 ±20 8.0 6.4 PD ID PD ID 1.49 6.0 4.8 0.82 10.2 8.2 PD IDM TJ, Tstg IS EAS 2.4 56 −55 to 150 2.4 24.5 W A °C A mJ W A
1
ID MAX 10.
NTMS4872N Datasheet
