Datasheet4U Logo Datasheet4U.com

NTMS4872N - Power MOSFET

Key Features

  • 30 V, 10.2 A, N.
  • Channel, SO.
  • 8.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC.
  • 8 Surface Mount Package Saves Board Space This is a Pb.
  • Free Device www. DataSheet4U. com http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 13.5 mW @ 10 V 16.5 mW @ 4.5 V N.
  • Channel D Value 30 ±20 8.0 6.4 PD ID PD ID 1.49 6.0 4.8 0.82 10.2 8.2 PD ID.

📥 Download Datasheet

More Datasheets from onsemi

Part Number Description
NTMS4873NF Power MOSFET
NTMS4800N Power MOSFET
NTMS4801N N-Channel Power MOSFET
NTMS4802N Power MOSFET
NTMS4807N N-Channel Power MOSFET
NTMS4816N N-Channel Power MOSFET
NTMS4840N Power MOSFET
NTMS4107N Power MOSFET
NTMS4117N Power MOSFET
NTMS4118N Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTMS4872N Power MOSFET Features 30 V, 10.2 A, N−Channel, SO−8 • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13.5 mW @ 10 V 16.5 mW @ 4.5 V N−Channel D Value 30 ±20 8.0 6.4 PD ID PD ID 1.49 6.0 4.8 0.82 10.2 8.2 PD IDM TJ, Tstg IS EAS 2.4 56 −55 to 150 2.4 24.5 W A °C A mJ W A 1 ID MAX 10.