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NTMS4872N - Power MOSFET

Key Features

  • 30 V, 10.2 A, N.
  • Channel, SO.
  • 8.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC.
  • 8 Surface Mount Package Saves Board Space This is a Pb.
  • Free Device www. DataSheet4U. com http://onsemi. com V(BR)DSS 30 V RDS(ON) MAX 13.5 mW @ 10 V 16.5 mW @ 4.5 V N.
  • Channel D Value 30 ±20 8.0 6.4 PD ID PD ID 1.49 6.0 4.8 0.82 10.2 8.2 PD ID.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTMS4872N Power MOSFET Features 30 V, 10.2 A, N−Channel, SO−8 • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device www.DataSheet4U.com http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 13.5 mW @ 10 V 16.5 mW @ 4.5 V N−Channel D Value 30 ±20 8.0 6.4 PD ID PD ID 1.49 6.0 4.8 0.82 10.2 8.2 PD IDM TJ, Tstg IS EAS 2.4 56 −55 to 150 2.4 24.5 W A °C A mJ W A 1 ID MAX 10.