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NTMS4873NF Power MOSFET
Features
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30 V, 11.5 A, N−Channel, SO−8
• • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diode Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device
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V(BR)DSS 30 V RDS(ON) MAX 12 mW @ 10 V 15 mW @ 4.5 V N−Channel ID MAX 11.