NTMS5835NL Datasheet | onsemi

NTMS5835NL Power MOSFET 40 V, 12 A, 10 m W Features - Low RDS(on) - Low Capacitance ..net - Optimized Gate Charge - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant V(BR)DSS Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C TA = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 9.2 7.4 1.5 1.0 12 9.6 2.6 1.6 48 - 55 to +150 20 69 37 260 A °C A m J A °C 8 1 SO- 8 CASE 751 STYLE 12 W A W G Unit V V A 40 V http://onsemi. RDS(ON) MAX 10 m W @ 10 V 14 m W @ 4.5 V D ID MAX 12 A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) S N- CHANNEL MOSFET MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 5835NL AYWWG G 8 Drain Drain Drain Drain Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain- to- Source Avalanche Energy (VDD = 40 V, VGS = 10 V, L = 0.1 m H) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Top View = Assembly Location = Year = Work Week = Pb- Free Package A Y WW G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. (Note: Microdot may be in either location) THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction- to- Ambient Steady State (Note 1) Junction- to- Ambient - t ≤10 s (Note 1) Junction- to- Foot (Drain) (Note 1) Junction- to- Ambient Steady State (Note 2) Symbol Rq JA Rq JA Rq JF Rq JA Value 82 49 21 121 °C/W Unit ORDERING INFORMATION Device NTMS5835NLR2G Package Shipping† SO- 8 2500/Tape & Reel (Pb- Free) †For information on tape and reel...