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NTMS5838NL Power MOSFET
40 V, 7.5 A, 25 mW
Features
• Low RDS(on) • Low Capacitance www.DataSheet4U.net • Optimized Gate Charge • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C TA = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 5.8 4.6 1.5 1.0 7.5 6.0 2.6 1.6 30 −55 to +150 7.5 20 20 260 A °C A mJ A °C SO−8 CASE 751 STYLE 12 W A W G Unit V V A 40 V
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RDS(ON) MAX 25 mW @ 10 V 30.8 mW @ 4.