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NTTFS4930N - N-Channel Power MOSFET

Datasheet Summary

Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – NTTFS4930N

Datasheet Details

Part number NTTFS4930N
Manufacturer ON Semiconductor
File Size 196.45 KB
Description N-Channel Power MOSFET
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NTTFS4930N MOSFET – Power, Single, N-Channel, m8FL 30 V, 23 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Converters • Power Load Switch • Notebook Battery Management • Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VGS ±20 V TA = 25°C ID 7.2 A TA = 85°C 5.2 TA = 25°C PD 2.06 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID TA = 85°C 9.6 A 6.
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