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NTTFS4939N - Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTTFS4939N MOSFET – Power, Single, N-Channel, m8FL 30 V, 52 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Low−Side DC−DC Converters • Power Load Switch • Notebook Battery Management • Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 14.3 A TA = 85°C 10.3 TA = 25°C PD 2.21 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 20.3 A TA = 85°C 14.