Datasheet4U Logo Datasheet4U.com

NTTFS4932N - Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTTFS4932N MOSFET – Power, Single, N-Channel, m8FL 30 V, 79 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Low−Side DC−DC Converters • Power Load Switch • Notebook Battery Management • Motor Control MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) TA = 25°C TA = 85°C TA = 25°C VDSS VGS ID PD 30 V ±20 V 18 A 13 2.2 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 25.5 A TA = 85°C 18.