NTTS2P02R2 Datasheet | onsemi

Features - - - - - - Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro- 8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided http://onsemi. Applications - Power Management in Portable and Battery- Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Thermal Resistance - Junction- to- Ambient (Note 1.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.) Thermal Resistance - Junction- to- Ambient (Note 2.) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 3.) Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = - 20 Vdc, VGS = - 4.5 Vdc, Peak IL = - 5.0 Apk, L = 28 m H, RG = 25 Ω) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS RθJA PD ID ID IDM RθJA PD ID ID IDM TJ, Tstg EAS Value - 20 ±8.0 Unit V V - 2.4 AMPERES - 20 VOLTS RDS(on) = 90 m W Single P- Channel D 160 °C/W 0.78 W - 2.4 A - 1.92 A - 20 A . 88 1.42 - 3.25 - 2.6 - 30 - 55 to +150 350 °C/W W A A A °C m J Y WW AD 8 Data Shee MARKING DIAGRAM 1 Micro8 CASE 846A STYLE 1 YWW AD = Year = Work Week = Device Code °C Source Source Source Gate PIN ASSIGNMENT 1 2 3 4 8 7 6 5 Drain Drain Drain Drain 1. Minimum FR- 4 or G- 10 PCB, Steady State. 2. Mounted onto a 2″ square FR- 4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), Steady State. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤...