Datasheet4U Logo Datasheet4U.com

NUS6160MN - Low Profile Overvoltage Protection

Description

http://onsemi.com 3 NUS6160MN PIN DESCRIPTION Pin Name 1 Out 3 4, 5, 6, 7 8 9, 11, 13 10 12 14 15 Gate FETSW Drain FETSW Source FETSW Drain FETREG Source FETREG N/C Gate FETREG FLAG 2, 16, 17, N/C 21, 22 18 EN 19 Gnd 20 In Description This pin is the output of the internal OVP ch

Features

  • Overvoltage Turn.
  • Off Time of Less Than 1.5 ms.
  • Undervoltage Lockout Protection; 3.0 V, Nominal.
  • High Accuracy Undervoltage Threshold of 5.0%.
  • 20 V Integrated P.
  • Channel Power MOSFET.
  • Low RDS(on) = 64 mW @.
  • 4.5 V.
  • Compact 3.0 x 4.0 mm QFN Package.
  • Maximum Solder Reflow Temperature @ 260°C.
  • This is a Pb.
  • Free Device Benefits.
  • Provide Battery Protection.
  • Integrated Solut.

📥 Download Datasheet

Datasheet preview – NUS6160MN

Datasheet Details

Part number NUS6160MN
Manufacturer ON Semiconductor
File Size 450.48 KB
Description Low Profile Overvoltage Protection
Datasheet download datasheet NUS6160MN Datasheet
Additional preview pages of the NUS6160MN datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
NUS6160MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit (OVP) with a dual 20 V P−channel power MOSFET. The OVP is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such events, the IC quickly disconnects the input supply from the load, thus protecting it. The integration of the additional transistor and power MOSFET reduces layout space and promotes better charging performance. The IC is optimized for applications that use an external AC−DC adapter or a car accessory charger to power a portable product or recharge its internal batteries. Features • Overvoltage Turn−Off Time of Less Than 1.
Published: |