NUS6160MN Overview
NUS6160MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by bining an overvoltage protection circuit (OVP) with a dual 20 V P−channel power MOSFET. The OVP is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such events, the IC quickly disconnects the input supply from...
NUS6160MN Key Features
- Overvoltage Turn-Off Time of Less Than 1.5 ms
- Undervoltage Lockout Protection; 3.0 V, Nominal
- High Accuracy Undervoltage Threshold of 5.0%
- 20 V Integrated P-Channel Power MOSFET
- Low RDS(on) = 64 mW @ -4.5 V
- pact 3.0 x 4.0 mm QFN Package
- Maximum Solder Reflow Temperature @ 260°C
- This is a Pb-Free Device
- Provide Battery Protection
- Integrated Solution Offers Cost and Space Savings