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NUS6189MN Datasheet Low Profile Overvoltage Protection

Manufacturer: onsemi

Overview: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit (OVP) with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low RDS(on) power MOSFET or charging. The OVP is specifically designed to protect sensitive electronic circuitry from overvoltage transients and power supply faults. During such events, the IC quickly disconnects the input supply from the load, thus protecting it. The integration of the additional transistor and power MOSFET reduces layout space and promotes better charging performance. The IC is optimized for applications that use an external AC−DC adapter or a car accessory charger to power a portable product or recharge its internal batteries.

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Key Features

  • Overvoltage Turn.
  • Off Time of Less Than 1.0 ms.
  • Accurate Voltage Threshold of 6.85 V, Nominal.
  • Undervoltage Lockout Protection; 2.8 V, Nominal.
  • High Accuracy Undervoltage Threshold of 2.0%.
  • 30 V Integrated P.
  • Channel Power MOSFET.
  • Low RDS(on) = 50 mW @.
  • 4.5 V.
  • High Performance.
  • 12 V P.
  • Channel Power MOSFET.
  • Single.
  • Low Vce(sat) Transistors as Charging Power Mux.

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