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NVD6820NL
MOSFET – Power, Single N-Channel
90 V, 17 mW, 50 A
Features
• Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
90
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
TC = 25°C
ID
rent RqJC (Notes 1 & 3) Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
PD
(Note 1)
TC = 100°C
50
A
35
100 W
50
Continuous Drain
TA = 25°C
ID
Current RqJA (Notes 1,
2 & 3)
Steady TA = 100°C
Power Dissipation RqJA State TA = 25°C
PD
(Notes 1 & 2)
TA = 100°C
10
A
7.0
4.0
W
2.
NVD6820NL Datasheet
