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MOSFET – Power, Single N-Channel
100 V, 20 mW, 41 A
NVD6824NL
Features
Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC−Q101 Qualified These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
TC = 25C
ID
rent RqJC (Note 1)
Steady TC = 100C
Power Dissipation RqJC State TC = 25C
PD
(Note 1)
TC = 100C
41
A
29
90
W
45
Continuous Drain Cur-
TA = 25C
ID
rent RqJA (Notes 1 & 2) Steady TA = 100C
Power Dissipation RqJA State TA = 25C
PD
(Notes 1 & 2)
TA = 100C
8.5
A
6.0
3.9
W
1.