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NTD6414AN, NVD6414AN
N-Channel Power MOSFET 100 V, 32 A, 37 mW
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain Current RqJC
Power Dissipation RqJC
Steady State
Steady State
TC = 25°C TC = 100°C TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS VGS ID
PD
IDM TJ, Tstg
100 ±20 32 22 100
117 −55 to +175
V V A
W
A °C
Source Current (Body Diode)
Single Pulse Drain−to−Source A
NVD6414AN Datasheet
