NVD6416AN Datasheet | onsemi

MOSFET - Power, N-Channel 100 V, 17 A, 81 mW NTD6416AN, NVD6416AN Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - HBM ESD Level Class 1B, MM ESD Level Class M2 - NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - Continuous ±20 Continuous Drain Steady TC = 25°C Current State TC = 100°C Power Dissipation Steady TC = 25°C State Pulsed Drain...