NVD6415AN Datasheet | onsemi

NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Continuous Drain Current RqJC Power Dissipation RqJC Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating and Storage Temperature Range VDSS VGS ID IDM TJ, Tstg 100...