NVD6416ANL Datasheet | onsemi

NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - Continuous VGS ±20 V Continuous Drain Current Steady State TC = 25°C TC = 100°C 19 A 13 Power Dissipation Steady TC = 25°C State 71 W Pulsed Drain Current tp = 10 ms Operating and Storage...