NVH4L050N65S3F
NVH4L050N65S3F is N-Channel MOSFET manufactured by onsemi.
Features
- Ultra Low Gate Charge & Low Effective Output Capacitance
- Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
- DC
Gate- to- Source Voltage
- AC (f > 1 Hz)
Drain Current Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed (Note 3)
Power Dissipation Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating Junction and Storage Temperature Range
VDSS VGSS VGSS
ID ID IDM PD PD TJ, TSTG
650 ±30 ±30 58 36 145 403 3.23
- 55 to +150
V V V A A A W W/°C °C
Single Pulsed Avalanche Energy (Note 4) Repetitive Avalanche Energy (Note 3) MOSFET dv/dt
EAS EAR dv/dt
830 m J 4.03 m J 100 V/ns
Peak Diode Recovery dv/dt (Note 5) dv/dt
50 V/ns
Max. Lead Temperature for Soldering Purposes
(1/8″ from case for 5 s)
300 °C
THERMAL CHARACTERISTICS
Parameter
Symbol Value Unit
Thermal Resistance, Junction- to- Case, Max. (Notes 1, 2)
Rq...
