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NVH4L060N065SC1 - SiC MOSFET

onsemi

Features

Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V.
Ultra Low Gate Charge (QG(tot) = 74 nC).
Low Capacitance (Coss = 133 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Pb.
Free and is RoHS Compliant Typical.

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NVH4L060N065SC1 sic mosfet by ON Semiconductor - Datasheet Preview

Datasheet Details

Part number	NVH4L060N065SC1
Manufacturer	onsemi
File Size	245.74 KB
Description	SiC MOSFET
Datasheet	NVH4L060N065SC1 Datasheet

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MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 44 mW, 47 A NVH4L060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ.

Published: Jan 24, 2023 |