NVMFS4C01N
NVMFS4C01N is Power MOSFET manufactured by onsemi.
Power MOSFET
30 V, 0.9 m W, 319 A, Single N- Channel, Logic Level, SO- 8FL
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS4C01NWF
- Wettable Flanks Option for Enhanced Optical
Inspection
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Continuous Drain Current Rq JC (Notes 1, 3)
Power Dissipation Rq JC (Notes 1, 3)
Steady State
TC = 25°C TC = 25°C
Continuous Drain Current Rq JA (Notes 1, 2, 3)
Power Dissipation Rq JA (Notes 1, 2, 3)
Steady State
TA = 25°C TA = 25°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS VGS ID
30 "20 319
PD 3.84
IDM TJ,...
