NVMFS4C05N
NVMFS4C05N is N-Channel Power MOSFET manufactured by onsemi.
Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- NVMFS4C05NWF
- Wettable Flanks Option for Enhanced Optical
Inspection
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Continuous Drain Current Rq JA (Notes 1, 2 and 4)
VDSS
±20
TA = 25°C
TA = 80°C
Power Dissipation Rq JA (Notes 1, 2 and 4)
TA = 25°C PD
3.61 W
Continuous Drain Current Rq JC (Notes 1, 2, 3 and 4)
Steady State
TC = 25°C
Continuous Drain Current Rq JC (Notes 1, 2, 3
TC = 80°C
ID and 4)
127 A
Power Dissipation Rq JC (Notes 1, 2, 3 and 4)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage...
