NVMFS4C05N Overview
MOSFET Power, Single N-Channel, SO-8 FL 30 V, 127 A NVMFS4C05N, NVMFS4C305N.
NVMFS4C05N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- NVMFS4C05NWF
- Wettable Flanks Option for Enhanced Optical
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 55 to °C +175
- Rev. 6