Download the NVMFS4C305N datasheet PDF.
This datasheet also covers the NVMFS4C05N variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low RDS(on) to Minimize Conduction Losses.
Low Capacitance to Minimize Driver Losses.
Optimized Gate Charge to Minimize Switching Losses.
NVMFS4C05NWF.
Wettable Flanks Option for Enhanced Optical
Inspection.
AEC.
Q101 Qualified and PPAP Capable.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS
Compliant.
Full PDF Text Transcription for NVMFS4C305N (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NVMFS4C305N. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel, SO-8 FL 30 V, 127 A NVMFS4C05N, NVMFS4C305N Features • Low RDS(on) to Minimize Conduction Losses • Low Capacit...
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05N Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Notes 1, 2 and 4) VDSS 30 V VGS ±20 V TA = 25°C TA = 80°C ID 27.2 A 21.6 Power Dissipation RqJA (Notes 1, 2 and 4) TA = 25°C PD 3.
NVMFS4C305N Datasheet
