NVMFS4C306N Description
MOSFET - Power, Single N-Channel, DFN5 30 V, 3.4 mW, 71 A NVMFS4C306N.
NVMFS4C306N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- AEC-Q101 Qualified and PPAP Capable
- NVMFS4C306NWF
- Wettable Flanks Option for Enhanced Optical
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
NVMFS4C306N Applications
- Reverse Battery Protection