NVMFS4C308N Description
MOSFET - Power, Single N-Channel, DFN5/DFNW5 30 V, 4.8 mW, 55 A NVMFS4C308N.
NVMFS4C308N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- AEC-Q101 Qualified and PPAP Capable
- NVMFS4C308NWF
- Wettable Flanks Option for Enhanced Optical
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
NVMFS4C308N Applications
- Reverse Battery Protection