NVMFS5C430N Datasheet | onsemi

DATA SHEET .onsemi. MOSFET - Power, Single N-Channel, DFN5/DFNW5 40 V, 1.7 mW, 185 A V(BR)DSS 40 V RDS(ON) MAX 1.7 mW @ 10 V ID MAX 185 A D (5,6) Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - NVMFS5C430NWF - Wettable Flank Option for Enhanced Optical Inspection - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage 20 Continuous Drain Current RqJC (Notes 1, 3) Power...