Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, Single N-Channel
40 V, 1.4 mW, 200 A
V(BR)DSS 40 V
RDS(ON) MAX 1.4 mW @ 10 V 2.2 mW @ 4.5 V
ID MAX 200 A
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS5C430NLWF
- Wettable Flank Option for Enhanced Optical
Inspection
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation...