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MOSFET - Power, Single N-Channel, m8FL
30 V, 2.25 mW, 162 A
NVTFS4C02N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVTFS4C02NWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Reverse Battery Protection • DC−DC Converter Output Driver
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20 V
Continuous Drain Current RqJA (Note 1)
TA = 25°C
ID
TA = 100°C
28.
NVTFS4C02N Datasheet
