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MOSFET – Power, Single N-Channel, m8FL
30 V, 3.6 mW, 102 A
NVTFS4C05N
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVTFS4C05NWF − Wettable Flanks Product • NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Notes 1, 2, 4)
VDSS
30
V
VGS
±20 V
TA = 25°C
ID
22
A
TA = 100°C
15.
NVTFS4C05N Datasheet
