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NXH008P120M3F1PG Datasheet Sic MOSFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package Product Preview NXH008P120M3F1PTG, NXH008P120M3F1PG The NXH008P120M3F1 is a power module containing 8 mWĂ/ 1200 V SiC MOSFET half−bridge and a thermistor in an F1 package.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

for pin names ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet.

Figure 1.

NXH008P120M3F1 Schematic Diagram This document contains information on a product under development.

Key Features

  • 8 mW / 1200 V M3S SiC MOSFET Half.
  • Bridge.
  • Thermistor.
  • Options with Pre.
  • Applied Thermal Interface Material (TIM) and without Pre.
  • Applied TIM.
  • Press.
  • Fit Pins.
  • These Devices are Pb.
  • Free, Halide Free and are RoHS Compliant Typical.

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