Datasheet Summary
Silicon Carbide (SiC) Module
- 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
Product Preview NXH008P120M3F1PTG, NXH008P120M3F1PG
The NXH008P120M3F1 is a power module containing 8 mWĂ/ 1200 V SiC MOSFET half- bridge and a thermistor in an F1 package.
Features
- 8 mW / 1200 V M3S SiC MOSFET Half- Bridge
- Thermistor
- Options with Pre- Applied Thermal Interface Material (TIM) and without Pre- Applied TIM
- Press- Fit Pins
- These Devices are Pb- Free, Halide Free and are RoHS pliant
Typical Applications
- Solar Inverter
- Uninterruptible Power Supplies
- Electric Vehicle Charging Stations
- Industrial Power
DATA SHEET .onsemi.
PACKAGE PICTURE
PIM18 33.8x42.5...