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PCP1402 - Power MOSFET

Key Features

  • On-resistance RDS(on)=1.8Ω (typ).
  • Input Capacitance Ciss=210pF (typ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation VDSS VGSS ID IDP PD PW10s, duty cycle1% Tc=25C When mounted on ceramic substrate (600mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Value 250 30 1.2 4.8 3.5 1.5 150 55 to.

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Datasheet Details

Part number PCP1402
Manufacturer onsemi
File Size 465.63 KB
Description Power MOSFET
Datasheet download datasheet PCP1402 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2303A PCP1402 Power MOSFET 250V, 2.4Ω, 1.2A, Single N-Channel http://onsemi.com Features  On-resistance RDS(on)=1.8Ω (typ)  Input Capacitance Ciss=210pF (typ)  Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation VDSS VGSS ID IDP PD PW10s, duty cycle1% Tc=25C When mounted on ceramic substrate (600mm20.8mm) Junction Temperature Tj Storage Temperature Tstg Value 250 30 1.2 4.8 3.5 1.5 150 55 to +150 Unit V V A A W W C C Stresses exceeding those listed in the Maximum Ratings table may damage the device.