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PCP1403 - N-Channel Power MOSFET

Key Features

  • On-resistance RDS(on)1=92mΩ(typ. ).
  • 4V drive.
  • Protection Diode in.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW≤10μs, duty cycle≤1% Tc=25°C PD When mounted on ceramic substrate (600mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg Value 60 ±20 4.5 18 3.

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Datasheet Details

Part number PCP1403
Manufacturer onsemi
File Size 401.78 KB
Description N-Channel Power MOSFET
Datasheet download datasheet PCP1403 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2294A PCP1403 N-Channel Power MOSFET 60V, 4.5A, 117mΩ, Single PCP http://onsemi.com Features • On-resistance RDS(on)1=92mΩ(typ.) • 4V drive • Protection Diode in • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW≤10μs, duty cycle≤1% Tc=25°C PD When mounted on ceramic substrate (600mm2×0.8mm) Junction Temperature Tj Storage Temperature Tstg Value 60 ±20 4.5 18 3.5 1.3 150 - 55 to +150 Unit V V A A W W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.