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SCH2408 - N-Channel Silicon MOSFET

Key Features

  • 1.5V drive.
  • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit Ratings 30 ±10 0.35 1.4.

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Datasheet Details

Part number SCH2408
Manufacturer onsemi
File Size 91.01 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet SCH2408 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SCH2408 Ordering number : ENA1198 SCH2408 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% When mounted on ceramic substrate (900mm2✕0.8mm) 1unit Ratings 30 ±10 0.35 1.4 0.