Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting.
[MOSFET].
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
[SBD].
Short reverse recovery time.
Low forward voltage. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dra.
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SCH2819
Ordering number : ENN8291
SCH2819
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
Features
• Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting.
• [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.
• [SBD] • Short reverse recovery time. • Low forward voltage.