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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Complementary Silicon High-Power Transistors
. . . for general–purpose power amplifier and switching applications. • • • • 10 A Collector Current Low Leakage Current — ICEO = 0.7 mA @ 60 V Excellent dc Gain — hFE = 40 Typ @ 3.0 A High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.