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NPN High-Power Transistors
TIP33C
Designed for general−purpose power amplifier and switching applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices is Pb−Free*
MAXIMUM RATINGS Rating
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous
− Peak (Note 1)
Symbol VCEO VCBO VEBO IC
Value 100 100 5.0 10 15
Unit Vdc Vdc Vdc Adc Apk
Base Current − Continuous Total Device Dissipation @ TC = 25°C
Derate above 25°C
IB
3.0
Adc
PD
80
Watts
0.64
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.