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MMBD6100LT1 Monolithic Dual Switching Diode
http://onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Symbol VR IF IFM(surge) Reverse Voltage Forward Current Peak Forward Surge Current Rating Value 70 200 500 Unit Vdc mAdc mAdc PLASTIC SOT–23S CASE 318
1 2 3
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation, FR–5 Board TA = 25°C Derate above 25°C
(1)
Max 225 1.8 556 300 2.4 417 –55 to +150
Unit mW mW/°C °C/W mW mW/°C °C/W °C
RqJA PD
Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range
DEVICE MARKING
5BM
RqJA TJ, Tstg
(1) FR– 5 = 1.0 0.75 (2) Alumina = 0.4 0.3
0.062 in. 0.024 in. 99.5% alumina.
MMBD6100LT3 Datasheet
