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ON Semiconductort
Low Noise Transistors
NPN Silicon
MMBT5088LT1 MMBT5089LT1
MMBT5089LT1 is a Preferred Device
3
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50 5089LT1 25 30 Unit Vdc Vdc Vdc mAdc
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AF) COLLECTOR 3 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300
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Unit mW mW/°C °C/W mW mW/°C °C/W °C
2.
MMBT5089LT1 Datasheet
