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MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L
VHF/UHF Transistor
NPN Silicon
Features
• S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25 Vdc
Collector-Base Voltage Emitter-Base Voltage THERMAL CHARACTERISTICS
VCBO VEBO
30 Vdc 3.0 Vdc
Characteristic
Symbol
Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C Derate above 25°C
PD
300 mW 2.
MMBTH10L Datasheet
