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MMBTH10LT1, MMBTH10−4LT1
Preferred Devices
VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking:
Features http://onsemi.com
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc
3
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RθJA PD 300 2.