2N6287 Description
2N6286, 2N6287 (PNP) Preferred Device Darlington plementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications.
2N6287 Key Features
- High DC Current Gain @ IC = 10 Adc
- hFE = 2400 (Typ)
- 2N6284 = 4000 (Typ)
- 2N6287
- Collector-Emitter Sustaining Voltage
- VCEO(sus) = 100 Vdc (Min)
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- Pb-Free Packages are Available
- Continuous
- 65 to + 200