Download 4N35 Datasheet PDF
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4N35 Description

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package.

4N35 Key Features

  • Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V
  • 100% for 4N35
  • Safety and Regulatory Approvals
  • UL1577, 5,000 VACRMS for 1 Minute
  • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation