BSS138W Description
These N−Channel Enhancement Mode Field Effect Transistor. These products have been Designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
BSS138W Key Features
- RDS(on) = 3.5 W @ VGS = 10 V, ID = 0.22 A
- High Density Cell Design For Extremely Low RDS(on)
- Rugged and Reliable
- pact Industry Standard SOT-323 Surface Mount Package
- These Devices are Pb-Free and Halide Free