BSS138W Datasheet | Specifications & PDF Download

BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect T

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications are dc–dc converters, power management in portable

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications are dc–dc converters, power management in portable

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Main Product Characteristics: VDSS RDS(on) 50V 1.4Ω (typ.) ID 0.2A SOT-323 Features and Benefits:  Advanced MOSFET process technology  Special

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BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA Description and Applicat

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SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualifie

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BSS138WQ 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.28A Description and App

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138W Description These N−Channel Enhancement Mode Field Effect Transistor. These pr

Rating: 1 ★ (1 votes)