FCH35N60 Description
SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching...
FCH35N60 Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 79 mW
- Ultra Low Gate Charge (Typ. Qg = 139 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 340 pF)
- 100% Avalanche Tested
- This is a Pb-Free Device