FCPF190N60-F152 Description
N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199.
FCPF190N60-F152 Key Features
- 650 V @TJ = 150°C
- Max. RDS(on) = 199 mΩ
- Ultra low gate charge (typ. Qg = 57 nC)
- Low effective output capacitance (typ. Coss.eff = 160 pF)
- 100% avalanche tested
- LCD / LED / PDP TV Lighting
- Solar Inverter
- AC-DC Power Supply