FDB0690N1507L Description
This N-Channel MOSFET is produced using ON Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications. High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS pliant Applications Industrial Motor Drive ...
FDB0690N1507L Key Features
- Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A
- Fast Switching Speed
- Low Gate Charge